Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-08-29

2006-08-29

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S426000, C438S435000, C438S221000, C438S701000

Reexamination Certificate

active

07098115

ABSTRACT:
Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

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patent: 6294481 (2001-09-01), Inumiya et al.
patent: 6326658 (2001-12-01), Tsunashima et al.
patent: 6559486 (2003-05-01), Ueda

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