Semiconductor device and method of manufacturing the same

Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only

Reexamination Certificate

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C349S138000

Reexamination Certificate

active

07006177

ABSTRACT:
To provide an active matrix type liquid crystal display device having fine display performance, an interlayer insulating film104covering TFTs102, 103formed on a substrate101is first flattened by mechanical polishing typified by a CMP. Then pixel electrodes106, 107are formed thereon, and further, an insulating layer108covering the pixel electrodes is formed. And then, the insulating layer108is flattened by second mechanical polishing so that the surfaces of the pixel electrodes and the surface of the insulating layers112, 113form the same plane. By this, a difference in level disappears, and it is possible to prevent lowering of contrast or the like due to poor orientation of a liquid crystal material, diffused reflection of light, and the like.

REFERENCES:
patent: 5117299 (1992-05-01), Kondo et al
patent: 5132676 (1992-07-01), Kimura et al
patent: 5240801 (1993-08-01), Hayashi et al
patent: 5330616 (1994-07-01), Yamazaki
patent: 5583369 (1996-12-01), Yamazaki et al
patent: 5592318 (1997-01-01), Majima et al
patent: 5652667 (1997-07-01), Kurogane
patent: 5706067 (1998-01-01), Colgan et al
patent: 5739890 (1998-04-01), Uda et al
patent: 5754263 (1998-05-01), Akiyama et al
patent: 5757054 (1998-05-01), Miyawaki et al
patent: 5767827 (1998-06-01), Kobayashi et al
patent: 5910271 (1999-06-01), Ohe et al
patent: 5933204 (1999-08-01), Fukumoto
patent: 5946561 (1999-08-01), Yamazaki et al
patent: 5949107 (1999-09-01), Zhang
patent: 6008876 (1999-12-01), Moore
patent: 6037197 (2000-03-01), Yamazaki et al
patent: 6049132 (2000-04-01), Iwahashi et al
patent: 6294815 (2001-09-01), Yamazaki et al
patent: 6326249 (2001-12-01), Yamazaki et al
patent: 6468844 (2002-10-01), Yamazaki et al
U.S. Appl. No. 09/046,198 filed Mar. 23, 1998, Specification, Claims, Abstract, and Official Filing Receipt.
U.S. Appl. No. 09/197,767 filed Nov. 23, 1998, Specification, Claims, Abstract, and Official Filing Receipt.
U.S. Appl. No. 09/550,598 filed Apr. 17, 2000, Specification, Claims, Abstract, and Official Filing Receipt.

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