Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1998-07-20

2000-11-21

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438435, 438437, 148DIG50, H01L 2176

Patent

active

061502332

ABSTRACT:
An underlaid silicon oxide film (2) and a polycrystalline silicon film (5) are formed in this order on a surface (1S) of a silicon substrate (1). The polycrystalline silicon film (5) and the underlaid silicon oxide (2) are opened by anisotropic etching, to form a trench (21) extending to the inside of the semiconductor substrate (1). A silicon oxide film (11) formed by HDP-CVD is buried in the trench (21). A resist (41) is formed only on a surface of the silicon oxide film (11) in a device isolation region (20). The silicon oxide film (11) in an active region (30) is removed by dry etching with the resist (41) as a mask. After removing the resist (41), only the polycrystalline silicon film (5) is removed by dry etching. The underlaid oxide film (2) is removed by wet etching with hydrofluoric acid. By this method of manufacturing a semiconductor device, the surface of the semiconductor substrate and a trench-type device isolation are flattened effectively at low cost.

REFERENCES:
patent: 5182221 (1993-01-01), Sato
patent: 5242853 (1993-09-01), Sato et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5728621 (1998-03-01), Zheng et al.
patent: 5851899 (1998-12-01), Weigand

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