Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-11-21

2006-11-21

Ha, Nguyen T. (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S321300, C361S306200, C257S295000, C257S296000

Reexamination Certificate

active

07139161

ABSTRACT:
There are provides the steps of forming sequentially a first conductive film, a dielectric film, and a second conductive film on an insulating film, forming a first film on the second conductive film, forming a second film made of insulating material on the first film, forming hard masks by patterning the second film and the first film into a capacitor planar shape, etching the second conductive film and the dielectric film in a region not covered with the hard masks, etching the first conductive film in the region not covered with the hard masks up to a depth that does not expose the insulating film, removing the second film constituting the hard masks by etching, etching a remaining portion of the first conductive film in the region not covered with the hard masks to the end, and removing the first film.

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Office Action from Japanese Patent Office dated Jan. 10, 2006; Application No. 2002-072199.

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