Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-05-02

2006-05-02

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S197000, C257S477000, C257S565000

Reexamination Certificate

active

07038244

ABSTRACT:
A semiconductor device includes a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer, which are sequentially laminated on a substrate. It also includes an emitter electrode, a base electrode, and a collector electrode, which are respectively formed on the emitter cap layer, the base layer, and the sub-collector layer. The sub-collector layer is made up of a first sub-collector layer adjacent to the substrate and a second sub-collector layer adjacent to the collector layer. In the area between adjacent device elements, the first sub-collector layer has an element insulating region created by ion implantation, and the second sub-collector layer has a recess-shaped element insulating region.

REFERENCES:
patent: 5340755 (1994-08-01), Zwicknagl et al.
patent: 2004/0065897 (2004-04-01), Lee et al.
patent: 2002-299603 (2002-10-01), None

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