Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2006-04-18
2006-04-18
Graybill, David E. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S042000, C438S700000, C438S109000, C438S656000, C438S114000, C438S754000, C438S462000, C438S657000, C438S756000, C438S465000, C438S667000, C438S459000, C438S757000, C438S597000, C438S684000, C438S691000, C438S759000, C438S614000, C438S685000, C438S692000, C438S959000, C438S653000, C438S687000, C438S696000, C438S977000, C438S654000
Reexamination Certificate
active
07029937
ABSTRACT:
A depression is formed from a first surface of a semiconductor substrate. An insulating layer is provided on the bottom surface and an inner wall surface of the depression. A conductive portion is provided inside the insulating layer. A second surface of the semiconductor substrate is etched by a first etchant having characteristics such that the etching amount with respect to the semiconductor substrate is greater than the etching amount with respect to the insulating layer, and the conductive portion is caused to project while covered by the insulating layer. At least a portion of the insulating layer formed on the bottom surface of the depression is etched with a second etchant having characteristics such that at least the insulating layer is etched without forming a residue on the conductive portion, to expose the conductive portion.
REFERENCES:
patent: 4978639 (1990-12-01), Hua et al.
patent: 5100480 (1992-03-01), Hayafuji
patent: 5466631 (1995-11-01), Ichikawa et al.
patent: 5504036 (1996-04-01), Dekker et al.
patent: 5767001 (1998-06-01), Bertagnolli et al.
patent: 6184060 (2001-02-01), Siniaguine
patent: 6322903 (2001-11-01), Siniaguine et al.
patent: 6420209 (2002-07-01), Siniaguine
patent: 6448153 (2002-09-01), Siniaguine et al.
patent: 6498074 (2002-12-01), Siniaguine et al.
patent: 6498381 (2002-12-01), Halahan et al.
patent: 6841849 (2005-01-01), Miyazawa
patent: 2001/0001215 (2001-05-01), Siniaguine et al.
patent: 2001/0028105 (2001-10-01), Nobuaki et al.
patent: 2001/0046276 (2001-11-01), Schneider et al.
patent: 2002/0013061 (2002-01-01), Siniaguine et al.
patent: 2002/0027293 (2002-03-01), Masataka
patent: 2002/0084513 (2002-07-01), Siniaguine
patent: 2002/0113321 (2002-08-01), Siniaguine
patent: 2002/0115234 (2002-08-01), Siniaguine
patent: 2002/0115260 (2002-08-01), Halahan et al.
patent: 2002/0115290 (2002-08-01), Halahan et al.
patent: 2003/0047798 (2003-03-01), Halahan
patent: 2003/0085460 (2003-05-01), Siniaguine
patent: 2003/0199123 (2003-10-01), Siniaguine
patent: A 60-7148 (1985-01-01), None
patent: A 60-7149 (1985-01-01), None
patent: 60098654 (1985-06-01), None
patent: 60098655 (1985-06-01), None
patent: 60235446 (1985-11-01), None
patent: 01244656 (1989-09-01), None
patent: A 2001-53218 (2001-02-01), None
patent: A 2001-326325 (2001-11-01), None
patent: WO 98/19337 (1998-05-01), None
Graybill David E.
Oliff & Berridg,e PLC
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