Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-10-17

2006-10-17

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S020000, C257S258000, C257SE51005, C438S048000, C438S128000, C438S149000, C438S151000, C438S157000, C438S283000, C349S038000, C349S039000, C349S151000

Reexamination Certificate

active

07122830

ABSTRACT:
The present invention provides a semiconductor device wherein the area of a peripheral circuit region with respect to a pixel region is reduced, and provides a manufacturing method of the semiconductor device. A semiconductor device according to the present invention is characterized by having a pixel region1,peripheral circuit regions2ato2carranged in at least a part of the periphery of the pixel region, and a wiring formed in the peripheral circuit region, and by having a wiring multilayered with two or more layers. At least one layer of the multilyered wiring is formed from a low resistance material. Transistors are formed in the peripheral circuit region, and the multilayer wiring with two or more layers is formed on the upper side of the transistors.

REFERENCES:
patent: 5712495 (1998-01-01), Suzawa
patent: 6124604 (2000-09-01), Koyama et al.
patent: 6271543 (2001-08-01), Ohtani et al.
patent: 6836428 (2004-12-01), Nakura et al.
patent: 6842214 (2005-01-01), Zhang
patent: 2003/0203454 (2003-10-01), Chotani et al.
patent: 2004/0029338 (2004-02-01), Yamazaki et al.
patent: 09-43630 (1997-02-01), None
patent: 09-312260 (1997-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3617481