Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-04-04
2006-04-04
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S059000, C257S070000, C257S072000, C257S079000, C257S350000, C257S627000, C438S149000
Reexamination Certificate
active
07023021
ABSTRACT:
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
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Japanese Patent Application Laid-Open No. 10-189252 (English Abstract attached).
Office Action in People's Republic of China Application No. 01117390.4 with English translation; Dec. 24, 2004.
Koyama Jun
Yamazaki Shunpei
Flynn Nathan J.
Mandala Jr. Victor A.
Semiconductor Energy Laboratory Co,. Ltd.
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