Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-07-11
2006-07-11
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S253000, C438S396000
Reexamination Certificate
active
07074625
ABSTRACT:
There is provided a semiconductor device which is manufactured via steps of forming a capacitor which is obtained by forming in sequence an upper electrode, a dielectric film formed of ferroelectric material or high-dielectric material, and a lower electrode on a semiconductor substrate, then forming an interlayer insulating film on the capacitor, then planarizing a surface of the interlayer insulating film by the CMP polishing, then removing a moisture attached to a surface of the interlayer insulating film or a moisture contained in the interlayer insulating film by applying the plasma annealing using an N2O gas, and then forming a redeposited interlayer film on the interlayer insulating film.
REFERENCES:
patent: 5847464 (1998-12-01), Singh et al.
patent: 5990491 (1999-11-01), Zhang
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6017784 (2000-01-01), Ohta et al.
patent: 6046490 (2000-04-01), Arita et al.
patent: 6246105 (2001-06-01), Morozumi et al.
patent: 6913970 (2005-07-01), Inoue et al.
patent: 0 877 422 (1998-11-01), None
patent: 07-050295 (1995-02-01), None
patent: 8-130199 (1996-05-01), None
patent: 8-203890 (1996-08-01), None
patent: 9-51077 (1997-02-01), None
patent: 09-199495 (1997-07-01), None
patent: 9-307074 (1997-11-01), None
patent: 10-079491 (1998-03-01), None
patent: 10-189578 (1998-07-01), None
patent: 10-275897 (1998-10-01), None
patent: 11-17124 (1999-01-01), None
patent: 11-87633 (1999-03-01), None
patent: 11-87647 (1999-03-01), None
patent: 11-145286 (1999-05-01), None
patent: 11-238855 (1999-08-01), None
patent: 2000-36568 (2000-02-01), None
patent: 2000-269434 (2000-09-01), None
US 5,932,901, 08/1999, Itabashi et al. (withdrawn)
Fujitsu Limited
Tsai H. Jey
Westerman, Hattori, Daniels & Adrian , LLP.
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