Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-07-18
2006-07-18
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S093000, C257S099000, C257S506000, C257S698000, C257S777000, C257SE33057, C257SE23141, C257SE23142
Reexamination Certificate
active
07078729
ABSTRACT:
A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.
REFERENCES:
patent: 5187377 (1993-02-01), Katoh
patent: 2004/0115849 (2004-06-01), Iwafuchi et al.
patent: 2001-244543 (2001-09-01), None
patent: 2003-86836 (2003-03-01), None
Fujiwara Hiroyuki
Suzuki Takahito
Fabin & Berdo, PC
Nguyen Joseph
Oki Data Corporation
Parker Kenneth
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