Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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Details

C257S093000, C257S099000, C257S506000, C257S698000, C257S777000, C257SE33057, C257SE23141, C257SE23142

Reexamination Certificate

active

07078729

ABSTRACT:
A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.

REFERENCES:
patent: 5187377 (1993-02-01), Katoh
patent: 2004/0115849 (2004-06-01), Iwafuchi et al.
patent: 2001-244543 (2001-09-01), None
patent: 2003-86836 (2003-03-01), None

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