Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-08-02
2005-08-02
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S412000, C438S300000, C438S655000
Reexamination Certificate
active
06924518
ABSTRACT:
There is disclosed is a semiconductor device which comprises a semiconductor substrate, isolation regions formed within the semiconductor substrate to define the active region, a pair of impurity diffusion regions formed within the element region in a manner to have surfaces elevated from the isolation region, a SiGe film formed on an upper surface of the impurity diffusion region so as to cover partly the side surface of the impurity diffusion region, a Ge concentration in the SiGe film being higher at a lower surface of the SiGe film than at an upper surface of the SiGe film, a metal silicide layer formed on the SiGe film, and a gate electrode formed in the active region of the semiconductor substrate with a gate insulating film interposed therebetween and having a sidewall insulating film formed on the side surface.
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Iinuma Toshihiko
Izuha Mitsuaki
Miyano Kiyotaka
Mizushima Ichiro
Suguro Kyoichi
Crane Sara
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
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