Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S204000, C257S357000, C257S369000, C438S128000, C438S129000

Reexamination Certificate

active

06953950

ABSTRACT:
There is provided a semiconductor device which includes a first interlayer insulating film (first insulating film) formed over a silicon (semiconductor) substrate, a capacitor formed on the first interlayer insulating film and having a lower electrode, a dielectric film, and an upper electrode, a fourth interlayer insulating film (second insulating film) formed over the capacitor and the first interlayer insulating film, and a metal pattern formed on the fourth interlayer insulating film over the capacitor and its periphery to have a stress in an opposite direction to the fourth interlayer insulating film. As a result, characteristics of the capacitor covered with the interlayer insulating film can be improved.

REFERENCES:
patent: 6368909 (2002-04-01), Koo
patent: 6570203 (2003-05-01), Hikosaka et al.
patent: 2002/0047111 (2002-04-01), Judai
patent: 1061573 (2000-12-01), None
patent: 11-330390 (1999-11-01), None
patent: 2001-36025 (2001-02-01), None
patent: 2001-60669 (2001-03-01), None

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