Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-08-16
2005-08-16
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S072000, C257S347000, C257S348000, C257S349000, C257S350000, C257S408000, C438S166000
Reexamination Certificate
active
06930328
ABSTRACT:
To obtain a semiconductor device and a method of manufacturing the same which can reduce influence of fluctuation in characteristic among transistors due to fluctuation in laser light irradiation number and laser light intensity on a semiconductor. There is provided a semiconductor device with plural pixels having transistors forming a matrix pattern, in which: the transistors have semiconductors crystallized by laser light irradiation; the semiconductors stretch over at least two pixels; the length of each of the semiconductors is longer than the pixel pitch of the pixels; and when the scan pitch of the laser light is given as M and the pixel pitch of the pixels is given as N, the semiconductors are irradiated with the laser light N/M times or more.
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Anzai Aya
Kimura Hajime
Nelms David
Tran Mai-Huong
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