Semiconductor device and method of manufacturing the same

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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C361S306300, C361S329000, C257S295000, C438S238000, C438S244000

Reexamination Certificate

active

06906908

ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate, an insulation region which covers the capacitor and has a first hole and a second hole, the first hole being provided apart from the capacitor and extending in a vertical direction with respect to a main surface of the semiconductor substrate, the second hole reaching an electrode of the capacitor, extending in the vertical direction with respect to the main surface of the semiconductor substrate and being shallower than the first hole, a tungsten plug provided in the first hole, a first oxygen barrier film provided between the tungsten plug and a side wall of the first hole, and a conductive plug provided in the second hole and connected to the electrode of the capacitor.

REFERENCES:
patent: 5306952 (1994-04-01), Matsuura et al.
patent: 6004839 (1999-12-01), Hayashi et al.
patent: 6051858 (2000-04-01), Uchida et al.
patent: 6083826 (2000-07-01), Kim et al.
patent: 6576942 (2003-06-01), Okutoh et al.
patent: 11-126881 (1999-05-01), None
patent: 2001-44376 (2001-02-01), None

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