Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-06-14
2005-06-14
Ghyka, Alexander (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S342000
Reexamination Certificate
active
06906345
ABSTRACT:
Disclosed is a semiconductor device having a reduced size, increased accuracy, and flattened element isolation regions with an decreased size. A plurality of MOSFETs having gate oxide films with different thicknesses and element isolation regions are formed by a manufacturing method employing oxygen implantation. An oxygen-ion implantation process and an annealing process are applied to a method of manufacturing the semiconductor device.
REFERENCES:
patent: 4419812 (1983-12-01), Topich
patent: 5712173 (1998-01-01), Liu et al.
patent: 5939754 (1999-08-01), Hoshi
Adams & Wilks
Ghyka Alexander
Seiko Instruments Inc.
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