Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-10-04

2005-10-04

Prenty, Mark V. (Department: 2822)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S601000

Reexamination Certificate

active

06951781

ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate, a first metal wiring and a fuse, both being formed as the same level above the semiconductor substrate, a first insulating film formed on the first metal wiring and the fuse, the first insulating film having a first pad opening arriving at the first metal wiring, a second metal wiring formed at least within the first pad opening, the second metal wiring not extending above the fuse, a stopper film formed on the first insulating film and the second metal wiring, and a second insulating film formed above the stopper film. A second pad opening is formed to expose the second metal wiring by removing the second insulating film and the stopper film, a fuse opening is formed above at least the fuse by removing the second insulating film and the stopper film, and by removing the first insulating film incompletely.

REFERENCES:
patent: 4432035 (1984-02-01), Hsieh et al.
patent: 6593207 (2003-07-01), Hong et al.
patent: 6677226 (2004-01-01), Bowen et al.
patent: 6835999 (2004-12-01), Omura et al.
patent: 2002/0079552 (2002-06-01), Koike
patent: 2004/0012073 (2004-01-01), Omura et al.
patent: 2001-135792 (2001-05-01), None
patent: 2001-176976 (2001-06-01), None

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