Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-10-25

2005-10-25

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S106000, C438S108000, C438S118000, C438S121000, C438S122000, C438S622000, C438S667000

Reexamination Certificate

active

06958544

ABSTRACT:
There are included the steps of preparing a wiring substrate having a wiring pattern on a surface, bonding a connection terminal of electronic chip, which has a predetermined element and the connection terminal on one surface, to the wiring pattern of the wiring substrate by a flip-chip bonding, forming an insulating film on the wiring substrate to have a film thickness that covers the electronic chip, or a film thickness that exposes at least another surface of the electronic chip, and reducing a thickness of the electronic chip by grinding another surface of the electronic chip and the insulating film.

REFERENCES:
patent: 6828224 (2004-12-01), Iijima et al.
patent: 2001/0004130 (2001-06-01), Higashi et al.
patent: 2001/0008794 (2001-07-01), Akagawa
patent: 2002/0127839 (2002-09-01), Umetsu et al.
patent: 1094511 (2001-04-01), None
patent: 1137066 (2001-09-01), None
patent: 1154474 (2001-11-01), None
patent: 1189272 (2002-03-01), None
patent: 1189273 (2002-03-01), None
patent: 1248295 (2002-10-01), None
patent: 2000-323645 (2000-11-01), None
patent: 2001-177045 (2001-06-01), None
patent: 2001-196525 (2001-07-01), None
European Search Report dated Apr. 15, 2004.
Abstract —03256994.9

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3454093