Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-08
2005-03-08
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S640000, C257S642000, C257S750000, C257S759000, C438S523000, C438S622000, C438S623000
Reexamination Certificate
active
06864580
ABSTRACT:
A semiconductor device having a structure in which no short circuit occurs between plug interconnections even when a void occurs in an insulating layer in a gap between wiring layers and a method of manufacturing the same are attained. The method includes: a step of forming transfer gates so as to be close to each other with a gap on a semiconductor substrate; a step of burying the gap and covering a wiring layer; a step of opening a contact hole in an insulating layer in the gap portion; a step of depositing a short-circuit preventing insulating film in the contact hole; an etch back step of removing the short-circuit preventing insulating film at least on the bottom of the gap to expose the semiconductor substrate; and a step of forming a plug interconnection.
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Kobayashi Heiji
Nakazawa Shoichiro
McDermott Will & Emery LLP
Renesas Technology Corp.
Ryoden Semiconductor System Engineering Corporation
Soward Ida M.
Zarabian Amir
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