Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1991-01-22

1991-12-10

Hille, Rolf

Metal treatment

Stock

Ferrous

357 43, 357 44, 357 49, 148DIG12, H01L 2704, H01L 2702, H01L 2712, H01L 21302

Patent

active

050722875

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a pair of low breakdown voltage elements formed in the substrate so as to be adjacent to each other, and a high breakdown voltage element formed to be adjacent to one of the low breakdown voltage elements. The pair of low breakdown voltage elements are isolated from each other by a pn junction and the low breakdown voltage elements and the high breakdown voltage element are isolated from each other by a dielectric material. The semiconductor substrate is a composite substrate formed by directly bonding a first substrate serving as an element region to a second substrate serving as a supporting member through an insulating film.

REFERENCES:
patent: 4286280 (1981-08-01), Sugawara
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4671846 (1987-06-01), Shimbo et al.
patent: 4700466 (1987-10-01), Nakagawa et al.
patent: 4710794 (1987-12-01), Koshino et al.
patent: 4725561 (1988-02-01), Haond et al.
patent: 4738935 (1988-04-01), Shimbo et al.
patent: 4751561 (1988-06-01), Jastrzebski
patent: 4791465 (1988-12-01), Sakai et al.
patent: 4897362 (1990-01-01), Delgado et al.
IEEE Electron Device Letters, vol. EDL-8, No. 10, 1987, P454-456, A Dielectrically Isolated Photodiode Array by Silicon-Wafer Direct Bonding, J. Ohura et al.
IEDM Technical Digest, 1985, pp. 728-731, 350 V Analog-Digital Compatible Power IC Technologies, Y. Sugawara et al.

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