Fishing – trapping – and vermin destroying
Patent
1990-04-24
1991-09-03
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
357 43, 148DIG9, H01L 2170
Patent
active
050454935
ABSTRACT:
A semiconductor device such as a Bi-CMOS having vertical or lateral bipolar transistors and MOS transistors is disclosed. The MOS transistors include a gate electrode made of a first conductive thin film, and sidewall spacers formed on the sides of the gate electrode and consisting of at least one deposition film. The vertical bipolar transistors include an emitter electrode made of a second conductive thin film, and an emitter diffusion window formed in the deposition film which is disposed under the emitter electrode. The lateral bipolar transistors include a base width defining region for defining the base width, and an insulation film formed between the base width defining region and the collector and emitter, and consisting of the deposition film.
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Kameyama Shuichi
Kikuchi Kazuya
Segawa Mizuki
Shimomura Hiroshi
Chaudhuri Olik
Matsushita Electric Ind., Ltd.
Pham Long
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