Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1991-08-14

1993-10-05

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437 31, 437 41, 437106, 437243, 257378, 257754, H01L 21265, H01L 2702

Patent

active

052504476

ABSTRACT:
A semiconductor device in which both a bipolar element and a MOS element are formed on a single semiconductor substrate. This device is composed of a semiconductor substrate, a bipolar element formed on the substrate so as to insulate a base region and an emitter electrode from one another by a base/emitter electrode insulating film, and a MOS element formed on the substrate in such a manner that a gate electrode together with an emitter electrode of the bipolar element are formed in a common layer and that a gate oxide film is formed between the gate electrode and another layer adjacent to and under the first-named layer. The base/emitter electrode insulating film has a thickness greater than that of the gate oxide film.

REFERENCES:
patent: 5065208 (1991-11-01), Shah et al.
patent: 5075752 (1991-12-01), Maeda et al.
patent: 5128740 (1992-07-01), Uchida et al.

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