Fishing – trapping – and vermin destroying
Patent
1994-05-13
1995-12-19
Fourson, George
Fishing, trapping, and vermin destroying
437 90, 437 99, 148DIG12, H01L 2176
Patent
active
054768098
ABSTRACT:
This invention relates to a semiconductor device which comprises a monocrystalline silicon substrate, a first insulating film formed in a first region on one major surface of the monocrystalline silicon substrate, a first monocrystalline silicon layer formed on the first insulating film, a second insulating film covering a side surface of the first monocrystalline silicon layer, a first polysilicon layer formed to cause a side surface of the first polysilicon layer to contact the second insulating film, and a second monocrystalline silicon layer, having a side surface contacts the first polysilicon layer, formed in a second region of the one major surface of the monocrystalline silicon substrate, and dielectrically isolated from the first monocrystalline silicon layer, and a method of manufacturing the same.
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Ohata et al., "Dielectrically Isolated Intelligent Power Switch," IEEE Custom Integrated Circuits Conference pp. 443-446 (1987).
Fourson George
NEC Corporation
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