Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-11-08

1998-05-12

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257172, H01L 2974

Patent

active

057510237

ABSTRACT:
In a semiconductor device and a method of manufacturing the same, the semiconductor device is provided with an n.sup.+ -type layer located between an n-type buffer layer and a p-type collector layer and having a higher impurity concentration than n-type buffer layer. A diffusion depth of p-type collector layer toward a first main surface is smaller in a first region and is larger in a second region. As a result, the semiconductor device has a sufficiently reduced turn-off loss.

REFERENCES:
patent: 5569941 (1996-10-01), Takahashi

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