Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1990-07-20

1991-01-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 22, 437126, 437909, 148DIG10, 148DIG11, 148DIG72, 148DIG84, 357 16, 357 34, H01L 21331

Patent

active

049835343

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a base region and a collector region on an Si substrate, forming, on the base region, an emitter region of a semiconductor material having an energy gap larger than that of Si, forming an Si film on the emitter region, ion-implanting an element into a surface portion of the emitter region or at the interface of the emitter region and the Si film and a periphery portion of the interface, and simultaneously forming electrodes on the base and collector regions and on the Si film. A heterojunction bipolar transistor manufactured by the above method is also disclosed.

REFERENCES:
patent: 2569347 (1951-09-01), Shockley
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4178190 (1979-12-01), Polinsky
patent: 4302763 (1981-11-01), Ohuchi et al.
patent: 4559696 (1985-12-01), Anand et al.
patent: 4768074 (1988-08-01), Yoshinda et al.
patent: 4769337 (1988-09-01), Maeda
"Heterostructure Bipolar Transistors and Integrated Circuits", Kroemer Proceedings of the IEEE, vol. 70, No. 1, pp. 13-25, Jan. 1982.
"An EPR Study on High Energy Ion Implanted Silicon", Lee et al, Ion Implantation in Semiconductors, Plenum Press, cover page and pp. 519-520, 522-524.
"P-Type Doping Observed in Silicon Implanted With High Energy Carbon Ions", Stephen et al, Ion Implantation in Semiconductors, Plenum Press, cover page and pp. 619-625 (1975).

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-934340