Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1980-03-21

1982-05-11

Edlow, Martin H.

357 16, 357 61, 357 30, H01L 4500

Patent

active

043296998

ABSTRACT:
A semiconductor device utilizing amorphous Si.sub.1-x C.sub.x (0.ltoreq..times..ltoreq.1) containing hydrogen. Through a high frequency glow discharge process or a high frequency sputtering process, the composition x is varied to form a heterojunction between amorphous Si.sub.1-x C.sub.x layers, and electrodes are mounted to the layers to complete the device. The amorphous material is desirably selected to have a forbidden band width of 1.7 to 3.2 eV so that the sensitivity of the device can cover the visible range. Because of the amorphous layers, freedom of type and shape of the substrate of the device is large. The dark resistance of the layers is large to improve the photoconductive characteristics of the semiconductor device.

REFERENCES:
patent: 3716844 (1973-02-01), Brodsky
patent: 4109271 (1978-08-01), Pankove

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