Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-07-22

2008-07-22

Toledo, Fernando L (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S435000, C257SE21548, C257SE21645

Reexamination Certificate

active

07402499

ABSTRACT:
A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively.

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U.S. Appl. No. 11/772,446, filed Jul. 2, 2007, Matsuno, et al.

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