Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Reexamination Certificate
2011-08-16
2011-08-16
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
C257S073000, C257S077000, C257S078000, C257S472000, C257S743000, C257S744000, C257S745000, C257S750000, C257S761000, C257S763000, C257S765000, C257S770000
Reexamination Certificate
active
07999346
ABSTRACT:
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.
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Matsushita Masashi
Okamura Yuji
Au Bac H
Picardat Kevin M
Rabin & Berdo PC
Rohm & Co., Ltd.
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