Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-01-18

2011-01-18

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S516000, C257S301000, C257S305000, C257SE27016, C438S386000, C438S427000

Reexamination Certificate

active

07872329

ABSTRACT:
Effective area of a capacitor is to be increased while suppressing increase in number of manufacturing steps. In a semiconductor device, a silicon substrate includes a plurality of first recessed portions having a first depth from the main surface thereof, a second recessed portion provided in a region other than the first recessed portion and having a second depth from the main surface, and a third recessed portion provided in at least one of the plurality of first recessed portions and having a third depth from the bottom portion of the first recessed portion. The second recessed portion and the third recessed portion have the same depth, and a decoupling condenser is provided so as to fill the at least one of the first recessed portion and the third recessed portion provided therein, and an isolation insulating layer is provided so as to fill the remaining first recessed portions, and the second recessed portion is filled with a gate electrode.

REFERENCES:
patent: 6373087 (2002-04-01), Harris et al.
patent: 6919246 (2005-07-01), Park
patent: 7566932 (2009-07-01), Huang et al.
patent: 60-148164 (1985-08-01), None
patent: 2000-332101 (2000-11-01), None
patent: 2005-353657 (2005-12-01), None

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