Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-06-14

2011-06-14

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S649000, C257SE27148

Reexamination Certificate

active

07960763

ABSTRACT:
A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface of the compound semiconductor layer and whose film density in an intermediate portion is lower than that in a lower portion.

REFERENCES:
patent: 5210052 (1993-05-01), Takasaki
patent: 5284789 (1994-02-01), Mori
patent: 5918147 (1999-06-01), Filipiak
patent: 2002/0130389 (2002-09-01), Arimochi et al.
patent: 2004/0007748 (2004-01-01), Sakama et al.
patent: 0454100 (1991-10-01), None
patent: 63-161625 (1988-07-01), None
patent: 64-20629 (1989-01-01), None
patent: 64-50535 (1989-02-01), None
patent: 2-303118 (1990-12-01), None
patent: 3-240265 (1991-10-01), None
patent: 4-6835 (1992-01-01), None
patent: 9-102494 (1997-04-01), None
patent: 2792948 (1998-09-01), None
patent: 11-204542 (1999-07-01), None
patent: 2000-323495 (2000-11-01), None
patent: 2001-15693 (2001-01-01), None
patent: 2001-135824 (2001-05-01), None
patent: 2002-110674 (2002-04-01), None
International Search Report of PCT/JP2006/302046, date of mailing May 16, 2006.
European Patent Office; Extended European Search Report mailed Jul. 26, 2010 in connection with U.S. Appl. No. 12/186,872 correspondent EP application 06 71 3189.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2714188