Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-04-26

2011-04-26

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S587000, C257SE21373, C257SE29187

Reexamination Certificate

active

07932580

ABSTRACT:
In the substrate and the epitaxial layer, isolation regions are formed to divide the substrate and the epitaxial layer into a plurality of element formation regions. Each of the isolation regions is formed by connecting first and second P type buried diffusion layers with a P type diffusion layer. By disposing the second P type buried diffusion layer between the first P type buried diffusion layer and the P type diffusion layer, a lateral diffusion width of the first P type buried diffusion layer is reduced. This structure allows a formation region of the isolation region to be reduced in size.

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