Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2011-07-12
2011-07-12
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S786000, C257SE23020, C257SE23151, C257SE23168, C257S762000
Reexamination Certificate
active
07977770
ABSTRACT:
A method of manufacturing a semiconductor device includes: forming a first pad including a first metal and an inter-connection line including the first metal in a scribe lane region; forming a second pad including the first metal in a chip region; sequentially forming an etch-stop layer and a first insulation layer on the first pad, the inter-connection line, and the second pad; exposing the first and second pads by patterning the etch-stop layer and the first insulation layer; forming third and fourth pads including a second metal on the first and second pads; sequentially forming second and third insulation layers on the third pad, the fourth pad, and the patterned first insulation layer; and etching the first, second, and third insulation layers using the patterned photosensitive layer on the third insulation layer to expose the third and fourth pads.
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Dongbu Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Wilczewski Mary
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