Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

Reexamination Certificate

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C257S786000, C257SE23020, C257SE23151, C257SE23168, C257S762000

Reexamination Certificate

active

07977770

ABSTRACT:
A method of manufacturing a semiconductor device includes: forming a first pad including a first metal and an inter-connection line including the first metal in a scribe lane region; forming a second pad including the first metal in a chip region; sequentially forming an etch-stop layer and a first insulation layer on the first pad, the inter-connection line, and the second pad; exposing the first and second pads by patterning the etch-stop layer and the first insulation layer; forming third and fourth pads including a second metal on the first and second pads; sequentially forming second and third insulation layers on the third pad, the fourth pad, and the patterned first insulation layer; and etching the first, second, and third insulation layers using the patterned photosensitive layer on the third insulation layer to expose the third and fourth pads.

REFERENCES:
patent: 4523372 (1985-06-01), Balda et al.
patent: 4670967 (1987-06-01), Hazuki
patent: 4906592 (1990-03-01), Merenda et al.
patent: 5141896 (1992-08-01), Katoh
patent: 5162260 (1992-11-01), Leibovitz et al.
patent: 5306947 (1994-04-01), Adachi et al.
patent: 5397743 (1995-03-01), Jun et al.
patent: 5556805 (1996-09-01), Tanizawa et al.
patent: 5593921 (1997-01-01), Chen et al.
patent: 5818110 (1998-10-01), Cronin
patent: 5847457 (1998-12-01), Chen et al.
patent: 5920793 (1999-07-01), Mizushima
patent: 6037668 (2000-03-01), Cave et al.
patent: 6566735 (2003-05-01), Minn et al.
patent: 6861344 (2005-03-01), Yajima et al.
patent: 7192804 (2007-03-01), Seo et al.
patent: 7223693 (2007-05-01), Choi et al.
patent: 7241681 (2007-07-01), Kumar et al.
patent: 7351651 (2008-04-01), Li et al.
patent: 7381646 (2008-06-01), Su et al.
patent: 7795705 (2010-09-01), Tsutsue
patent: 7883917 (2011-02-01), Liu et al.
patent: 2003/0234393 (2003-12-01), Cowles et al.
patent: 2006/0166384 (2006-07-01), Tatsumi
patent: 2006/0244133 (2006-11-01), Chen et al.
patent: 2009/0057842 (2009-03-01), He et al.
patent: 2010/0006984 (2010-01-01), Watanabe et al.
patent: 2010/0181650 (2010-07-01), Shigihara et al.

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