Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Reexamination Certificate
2011-01-11
2011-01-11
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
C257S565000, C257SE29185
Reexamination Certificate
active
07868424
ABSTRACT:
The invention relates to a semiconductor device (10) with a substrate (11) and a semiconductor body (12) comprising a vertical bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type and the first conductivity type, wherein the collector region (3) comprises a first sub-region (3A) bordering the base region (2) and a second sub-region (3B) bordering the first sub-region (3A) which has a lower doping concentration than the second sub-region (3B), and the transistor is provided with a gate electrode (5) which laterally borders the first sub-region (3A) and by means of which the first sub-region (3A) may be depleted. According to the invention the collector region (3) borders the surface of the semiconductor body (12), while the emitter region (1) is recessed in the semiconductor body (12), and the collector region (3) forms part of a mesa structure (6) formed at the surface of the semiconductor body (12). Such a device (10) has very favorable properties at high frequencies and high voltages and, moreover, is easy to manufacture. In a preferred embodiment the collector (3) comprises a nanowire (30) forming the mesa structure (6).
REFERENCES:
patent: 4586071 (1986-04-01), Tiwari et al.
patent: 2003/0030488 (2003-02-01), Hueting et al.
patent: 2003/0186509 (2003-10-01), Mochizuki et al.
patent: 2004/0219773 (2004-11-01), Choi et al.
patent: 2007/0034909 (2007-02-01), Stasiak et al.
patent: 1 229 589 (2002-08-01), None
Hueting R J et al: “A New Trench Bipolar Transistor for RF Applications”; IEEE Transactions on Electron Devices N.Y. vol. 51 No. 7 Jul. 2004; pp. 1108-1113.
Agarwal Prabhat
Hijzen Erwin
Hueting Raymond Josephus Engelbart
Hurkx Godefridus Adrianus Maria
Niesz Jamie
NXP B.V.
Smith Zandra
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