Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-01-18

2011-01-18

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

C438S454000, C257S340000, C257S341000

Reexamination Certificate

active

07871867

ABSTRACT:
A semiconductor device is disclosed that comprises a high breakdown voltage MOSFET. The MOSFET includes a source region of a second conductivity type and a drain region of the second conductivity type formed apart from each other in a well region of a first conductivity type, a channel region formed between the source region and the drain region, a gate insulation film formed on the channel region, a LOCOS oxide film having greater film thickness than the gate insulation film, and a gate electrode formed across the gate insulation film and the LOCOS oxide film.

REFERENCES:
patent: 5770880 (1998-06-01), Woodbury et al.
patent: 6198131 (2001-03-01), Tung
patent: 6963109 (2005-11-01), Kikuchi et al.
patent: 7087961 (2006-08-01), Kikuchi et al.
patent: 6-21445 (1994-01-01), None
patent: 2668713 (1997-07-01), None

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