Semiconductor device and method of manufacturing the same

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 85, 427 82, 427 86, 427 95, 428428, 428448, 428469, 148174, 148175, 148186, 148188, 357 49, 357 50, B05D 306, B05D 512, B32B 1706

Patent

active

043518567

ABSTRACT:
A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm.sup.2 /V.multidot.sec, and wherein at least one active device is formed by employing the polycrystalline film as its material. A large-area or elongate active device can be provided. The polycrystalline film for such semiconductor device is formed by a method wherein the amorphous or polycrystalline substrate is mounted in a vacuum chamber and wherein the polycrystalline film whose principal constituent is silicon is evaporated on the substrate under the conditions that the pressure during the evaporation is below 1.times.10.sup.-8 Torr and that the partial pressure of oxygen during the evaporation is below 1.times.10.sup.-9 Torr.

REFERENCES:
patent: 3082124 (1963-03-01), French et al.
patent: 3463667 (1969-08-01), Chupra
patent: 3794516 (1974-02-01), Engeler et al.
patent: 3892608 (1975-07-01), Kuhn
patent: 4179528 (1979-12-01), Losee et al.
patent: 4237151 (1980-12-01), Strongin et al.
Gorohov et al., "Characteristics of Polycrystalline Silicon Integrated Circuits", Thin Solid Films, vol. 35, No. 2, Jun. 1976, pp. 149-153.
"New Process Developed for Silicon-IC Substrate Production," Electrical Design News, vol. 18, No. 3, Jul. 5, 1973, pp. 30-31.
Neudeck et al., "Theory and Interpretation of the Field-Effect Conductance Experiment in Amorphous Silicon," J. Applied Physics, vol. 46, No. 6, Jun. 1975, pp. 2662-2669.
Barson, "Double-Diffused MOS Device and Process of Fabricating," IBM Technical Disclosure Bulletin, vol. 14, No. 10, Mar. 1972, pp. 2900-2901.
Lee et al., "Thin Film MOSFET's Fabricated in Laser-Annealed Polycrystalline Silicon", Applied Physics Letters, vol. 35, No. 2, Jul. 15, 1979, pp. 173-175.
Cuomo et al., "Polycrystalline Semiconductor Solar Cell," IBM Technical Disclosure Bulletin, vol. 17, No. 8, Jan. 1975, pp. 2455-2456.
Manoliu et al., "P-N Junctions in Polycrystalline-Silicon Films," Solid State Electronics, vol. 15, No. 10, Oct. 1972, pp. 1103-1106.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-399797

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.