Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-03-22

2011-03-22

Sandvik, Benjamin P (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S068000, C257S071000, C257S296000, C257S300000, C257S301000, C257SE21008, C257SE27016, C257SE27048, C257SE27071, C257SE27092, C257SE27093, C438S171000, C438S190000, C438S210000, C438S238000, C438S239000, C438S243000, C438S250000, C438S386000, C438S393000

Reexamination Certificate

active

07911028

ABSTRACT:
A semiconductor device including a metallic compound Hfx1Moy1Nz1as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.

REFERENCES:
patent: 5187557 (1993-02-01), Zenke
patent: 5930584 (1999-07-01), Sun et al.
patent: 2004/0070017 (2004-04-01), Yang et al.
patent: 2004/0152255 (2004-08-01), Seidl et al.
patent: 2008/0111167 (2008-05-01), Yamaguchi
patent: 2009/0200618 (2009-08-01), Boescke et al.
Characterizations of HfxMoyNz Alloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors; Japanese. Journal of Appl. Phys. vol. 47 (2008) pp. 2442-2445 Chao Sung Lai, Hsing Kan Peng, Chin Wei Huang, Kung Ming Fan, Yu Ching Fang1, Li Hsu1, Hui Chun Wang1, Chung Yuan Lee2, and Shian Jyh Lin2.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2660144