Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-05-17

2011-05-17

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S758000, C257S774000, C257SE23160, C257SE21584

Reexamination Certificate

active

07944053

ABSTRACT:
A first insulating film is formed on a semiconductor substrate. A first interconnection is formed in a trench formed in the first insulating film. A first barrier film is formed between the first interconnection and first insulating film. A second insulating film is formed on the upper surface of the first interconnection, and in a first hollow portion between the side surface of the first barrier film and the first insulating film. The second insulating film is formed from the upper surface of the first interconnection to a depth higher than the bottom surface of the first interconnection. The first hollow portion is formed below the bottom surface of the second insulating film.

REFERENCES:
patent: 6452276 (2002-09-01), Cohen et al.
patent: 7119439 (2006-10-01), Watanabe et al.
patent: 7538434 (2009-05-01), Shih et al.
patent: 2006/0151887 (2006-07-01), Oh et al.
patent: 2008/0057704 (2008-03-01), Koike et al.
patent: 2006-5010 (2006-01-01), None
T. Watanabe, et al., “Self-Formed Barrier Technology Using CuMn Alloy Seed for Copper Dual-Damascene Interconnect with Porous-SiOC/ Porous PAr Hybrid Dielectric”, IEEE IITC Proceeding, Jun. 2-4, 2007, 3 pages.

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