Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1995-04-20
1997-06-03
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257301, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
056357400
ABSTRACT:
A semiconductor storage device is disclosed herein. A semiconductor substrate 1 has a first conductive type. A first groove is provided in this semiconductor substrate 1. A second groove 20, which is deeper than the first groove, is provided so as to be stacked within the first groove. A MOS transistor which include first and second regions 22 and 23 is connected to an accumulating electrode 133. The accumulating electrode 133 is disposed in the second groove 20 and separated from it by an insulating film 124. An electrode 143 is provided on the accumulating electrode 133 and separated therefrom by a capacitor insulating film 135. The electrode 143 is buried in the first and second grooves.
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Hiroyuki Yoshida
Katsushi Boku
Takayuki Niuya
Toshiyuki Nagata
Yoichi Miyai
Donaldson Richard L.
Kesterson James C.
Matsil Ira S.
Meier Stephen D.
Texas Instruments Incorporated
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