Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2011-07-12
2011-07-12
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S773000, C257S778000, C257S786000, C257SE23021
Reexamination Certificate
active
07977790
ABSTRACT:
When manufacturing a semiconductor device by mounting a semiconductor chip2on a substrate1with a flip-chip method, projections9are formed between pads4arranged in multiple annular concentric layers on the semiconductor chip2other than pads4arranged along the innermost periphery thereof. On the substrate1, bonding resin3is dispensed onto an area inside the innermost periphery along which the pads4are arranged. By heating and applying pressure, the bonding resin3is spread over the entire gap between the substrate1and the semiconductor chip2so as to secure the substrate1to the semiconductor chip2by the bonding resin3, thereby preventing a void from being formed in an area outside the innermost periphery along which the pads4are arranged and thus stabilizing an electrical connection state between the semiconductor chip2and the substrate1.
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Panasonic Corporation
Parekh Nitin
Steptoe & Johnson LLP
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