Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Reexamination Certificate
2011-03-22
2011-03-22
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
C257SE21370, C257SE29174
Reexamination Certificate
active
07910449
ABSTRACT:
In a semiconductor device according to the present invention, two epitaxial layers are formed on a P type substrate. In the substrate and the epitaxial layers, isolation regions are formed to divide the substrate and the epitaxial layers into a plurality of islands. Each of the isolation regions is formed by connecting first and second P type buried layers with a P type diffusion layer. By disposing the second P type buried layer between the first P type buried layer and the P type diffusion layer, a lateral diffusion width of the first P type buried layer is reduced. By use of this structure, a formation region of the isolation region is reduced in size.
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Amatatsu Yoshimasa
Hata Hirotsugu
Soma Mitsuru
Blum David S
Fish & Richardson P.C.
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
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