Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-02-08

2011-02-08

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Resistor

C257SE21006, C257SE27016

Reexamination Certificate

active

07883983

ABSTRACT:
A method of manufacturing a semiconductor device, includes: forming a gate insulating film on a semiconductor substrate; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; and patterning a stacked film of the first and second metal films such that the stacked film is left in a gate electrode formation region and a resistive element formation region. The method further includes: removing the second metal film in the resistive element formation region with protecting a contact hole formation region. The method further includes: forming an interlayer insulating film so as to cover the stacked film; and removing the interlayer insulating film formed in the contact hole formation region to form a contact hole leading to the second metal film.

REFERENCES:
patent: 2008/0246073 (2008-10-01), Lee et al.
patent: 2010/0099229 (2010-04-01), Chiu et al.
patent: 2000-307060 (2000-11-01), None
patent: 2001-351877 (2001-12-01), None

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