Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1988-06-27

1989-09-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 84, 437923, 437967, 437233, 437247, 357 4, 148DIG122, H01L 2100, H01L 2102, H01L 2120, H01L 2136

Patent

active

048681407

ABSTRACT:
In a semiconductor device, an active layer is formed on an insulating substrate. The active layer is a polycrystalline semiconductor film having large diameter crystal grain. A carrier mobility of said polycrystalline semiconductor film is not lower than 10 cm.sup.2 /V.multidot.sec.

REFERENCES:
patent: 4214918 (1980-07-01), Gat et al.
patent: 4272880 (1981-06-01), Pashley
patent: 4514895 (1985-05-01), Nishimura
patent: 4557943 (1985-12-01), Rosler et al.
patent: 4581814 (1986-04-01), Celler et al.
patent: 4597160 (1986-07-01), Ipri
patent: 4625224 (1986-11-01), Nakagawa et al.
patent: 4626883 (1986-12-01), Kash et al.
patent: 4693759 (1987-09-01), Noguchi et al.
Karmins et al, IEEE Trans. on Elec. Dev., vol. Ed-27, No. 1, Jan. 1980, "A Monolithic . . . Polysilicon", pp. 290-293.
Nishimura et al, Appl. Phys. Lett., 1 Jan. 83, "Metal-Oxide-Semiconductor . . . Islands", pp. 102-104.
Kamins, T., A Monolithic Integrated Circuit Fabricated in Laser-Annealed Polysilicon, IEEE Electron Devices, vol. Ed 27, No. 1, Jan. 1980.
Mohammadi, F., A High-Voltage MOSFET in Polycrystalline Silicon, IEEE Electron Devices, vol. Ed. 27, No. 1, Jan. 1980.
Lu, N., The Effect of Film Thickness on the Electrical Properties of LPCVD Polysilicon Films, J. Electrochem. Soc. 131, p. 898, Apr. 1984.
Wolf, S., Silicon Processing for the VLSI Era, Chapters 4 and 6, Lattice Press, 1986.
Ghandhi, S., VLSI Fabrication Principles, Chapter 8, Wiley and Sons, 1983.
Sze, S., VLSI Technology, Chapter 3, McGraw-Hill, 1983.
Hatalis, M., High-Performance Thin-Film Transistors in Low-Temperature Crystallized LPCVD Amorphous Silicon Films, IEEE Electron Device Letters, vol. EDL-8, No. 8, Aug. 1987.
Levinson, J., Conductivity Behavior in Polycrystalline Semiconductor Thin Film Transistors, J. Appl. Phys., vol. 53, No. 2, Feb. 1982.

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