Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-03-12

1998-10-13

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

058223495

ABSTRACT:
This invention is a semiconductor device including a p-type InP substrate having a mesa stripe in which at least an active layer and an n-type cladding layer are formed, and a semiconductor layer so formed as to bury the side surfaces of the mesa stripe and having at least an n-type current blocking layer and a p-type current blocking layer, wherein the n-type current blocking layer contains approximately 8.times.10.sup.17 cm.sup.-3 or more of Se as an impurity and the n-type current blocking layer and the n-type cladding layer are not contacting each other.

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patent: 5596591 (1997-01-01), Kawano
Y. Ohkura, et al. "Low Threshold FS-BH Laser on P-INP Substrate Grown by ALL-MOCVD", Electronic Letters, Sep. 10, 1992, vol. 28, No. 19, pp. 1844-1845.

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