Semiconductor device and method of manufacturing the same

Fishing – trapping – and vermin destroying

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437 6, 437225, 148DIG145, 51325, 83875, 408204, H01L 2900, H01L 2102, H01L 2104, H01L 2100

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048227579

ABSTRACT:
The present invention relates to a semiconductor device which exposes a P-N junction portion in mesa groove to attain high reverse voltage blocking ability and a method of manufacturing the same. The mesa groove is provided in the form of a ring, and a section thereof is finished in positive bevel configuration being increased in width from a major surface toward an inner portion. Thus, a surface electric field of the mesa groove is weakened to attain high reverse voltage blocking ability, while the mesa groove of positive beveled structure can be accurately formed by employing a drill provided with a cutting edge having a mesa type sectional configuration.

REFERENCES:
The Electric Society Tokyo Branch General Meeting Monographies, The Sectional Committee [I], "Power Thyristor and the Problems in the Application Thereof" pp. 478-484, Ozu, Haruki, Kamei et al., published by the Electric Society in Tokyo, Dec. 1969.
IEEE Transactions on Electron Devices vol. ED-20, No. 6, Jun. 1973, "Depletion Layer Characteristics at the Surface of Beveled High-Voltage P-N Junctions", M. Bakowski and K. Ingemar Lundstrom.

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