Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1994-03-15
1996-04-23
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257557, 257588, H01L 2972, H01L 2182
Patent
active
055106471
ABSTRACT:
A bipolar transistor is formed on a silicon substrate having a silicon oxide film. An n-silicon layer having a top surface of a (100) plane is formed on the silicon oxide film and is used as a collector layer. An end face constituted by a (111) plane is formed on the end portion of the collector layer by etching, using an aqueous KOH solution. A B-doped p-silicon layer is formed on the end face by epitaxial growth and is used as a base layer. Furthermore, an As-doped n-silicon layer is formed on the base layer and is used as an emitter layer. Electrodes are respectively connected to the collector, base, and emitter layers.
REFERENCES:
patent: 5065210 (1991-11-01), Hirakawa
IEDM Tech. Dig., pp. 663-666, 1991, G. G. Shahid, et al., "A Novel High-Performance Lateral Bipolar on SOI".
Iinuma Toshihiko
Inou Kazumi
Iwai Hiroshi
Katsumata Yasuhiro
Kitagawa Mitsuhiko
Kabushiki Kaisha Toshiba
Monin, Jr. Donald L.
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