Fishing – trapping – and vermin destroying
Patent
1990-12-17
1992-03-31
Kunemund, Robert
Fishing, trapping, and vermin destroying
437 62, 437974, 357 49, 148DIG135, H01L 2176
Patent
active
051008149
ABSTRACT:
First and second semiconductor elements are formed in first and second semiconductor element forming regions which have the same thickness, include first and second semiconductor layers and are separated with dielectric isolation from each other. The thickness of the first semiconductor layer is made different between the first and second semiconductor element forming regions, so that the thickness of the second semiconductor layer becomes different between the first and second semiconductor element forming regions. Thus, the semiconductor device may have the semiconductor elements which have second semiconductor layers with different thicknesses in accordance with desired electrical characteristics for each of the semiconductor elements formed in the first and second semiconductor element forming regions, to complement a semiconductor device having the semiconductor elements each of which has independent optimum electrical characteristics.
REFERENCES:
patent: 4692784 (1987-09-01), Negoro
Kida Takeshi
Satsuma Kazumasa
Terashima Tomohide
Yamaguchi Hiroshi
Yoshizawa Masao
Kunemund Robert
Mitsubishi Denki & Kabushiki Kaisha
Pham Long
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