Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1990-12-17

1992-03-31

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 62, 437974, 357 49, 148DIG135, H01L 2176

Patent

active

051008149

ABSTRACT:
First and second semiconductor elements are formed in first and second semiconductor element forming regions which have the same thickness, include first and second semiconductor layers and are separated with dielectric isolation from each other. The thickness of the first semiconductor layer is made different between the first and second semiconductor element forming regions, so that the thickness of the second semiconductor layer becomes different between the first and second semiconductor element forming regions. Thus, the semiconductor device may have the semiconductor elements which have second semiconductor layers with different thicknesses in accordance with desired electrical characteristics for each of the semiconductor elements formed in the first and second semiconductor element forming regions, to complement a semiconductor device having the semiconductor elements each of which has independent optimum electrical characteristics.

REFERENCES:
patent: 4692784 (1987-09-01), Negoro

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