Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1995-06-06

1997-03-25

Ryan, Patrick

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428901, 257758, 257766, B32B 0900

Patent

active

056142919

ABSTRACT:
A semiconductor device, including a nickel layer formed on a semiconductor substrate and a solder layer formed on the nickel layer, and a method of manufacturing such a device are disclosed. The percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. The nickel layer is sputtered in a condition which a pressure of an argon discharge gas is at least 15 mTorr. The solder layer includes at least tin and lead, and the amount of tin is not more than 30% by weight. The adhesive strength of the resultant semiconductor device is strong.

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