Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1991-11-20

1992-12-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437142, 437173, 257288, H01L 4900

Patent

active

051716968

ABSTRACT:
The present invention direct to a semiconductor device and a method of manufacturing the same. According to the semiconductor device of the present invention, a first region is partially formed on a major surface of a semiconductor substrate so as to have the opposite conductivity to the first region, and an electrode is formed on the major surface. A barrier layer may be formed between the region adjacent to the first region of the semiconductor substrate and the electrode in order to reduce a current flowing in a parasitic diode. Or, an area of a connecting part between the first region and the electrode may be set to be larger than that of a connecting part between the region adjacent to the first region of the semiconductor substrate and the electrode in order to reduce a current flowing in a parasitic diode. Or, both of technique mentioned above may be combined to reduce a current flowing in a parasitic diode. Thus, it is possible to provide a semiconductor device which can be fit for high-frequency use.

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