Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1995-02-16

1996-09-03

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257637, 257758, 257760, H01L 2358, H01L 2348

Patent

active

055526284

ABSTRACT:
A semiconductor device of the present invention comprises a silicon substrate, a silicon oxide layer formed on the silicon substrate, first aluminum wires formed on the silicon oxide layer, a CVD SiO.sub.2 layer covering at least the first aluminum wires, and an inorganic oxide precipitated from a liquid-phase material, the inorganic oxide filling at least a gap between the first aluminum wires.

REFERENCES:
patent: 4907066 (1990-03-01), Thomas et al.
patent: 5060050 (1991-10-01), Tsuneoka et al.
patent: 5236874 (1993-08-01), Pintchovski
patent: 5354387 (1994-10-01), Lee et al.
"Physical and Chemical Properties of Silicon Dioxide Film Deposited By New Process," Proceedings 1987 Fall Meeting of The Materials Research Society, Boston, MA Nov. 30-Dec. 5, 1987 by Goda et al.

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