Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1990-08-22

1992-02-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 59, 148DIG9, H01L 21265, H01L 2970

Patent

active

050913220

ABSTRACT:
A method of manufacturing a semiconductor device. A semiconductor substrate is prepared and a gate oxide film is formed on a surface of the semiconductor substrate. The gate oxide film is selectively removed to expose portions of the semiconductor substrate and a first polysilicon layer is formed on a resultant semiconductor structure. Impurities are implanted in the polysilicon layer and a resultant semiconductor structure is annealed to activate the impurities. The first polysilicon layer is patterned to form a base electrode of the bipolar transistor and a gate and/or drain electrode of the MOS transistor. An insulating layer is then formed on a resultant semiconductor structure. Portions of the semiconductor substrate are then selectively exposed and a second polysilicon layer is formed on a resultant semiconductor structure. The second polysilicon layer is then patterned to form an emitter electrode of the bipolar transistor.

REFERENCES:
patent: 4589004 (1986-05-01), Yasuda
patent: 4637125 (1987-01-01), Iwasaki et al.
patent: 4764480 (1988-08-01), Vora
patent: 4774204 (1988-09-01), Havemann
patent: 4799098 (1989-01-01), Ikeda et al.
patent: 4806499 (1989-02-01), Shinohara
patent: 4879255 (1989-11-01), Deguchi et al.
patent: 4902640 (1990-02-01), Sachitano et al.
patent: 4914048 (1990-08-01), Scovell et al.
patent: 4922318 (1990-05-01), Thomas et al.
patent: 4957874 (1990-09-01), Soejima

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1892579