Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2009-04-01
2010-11-23
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S381000, C438S396000
Reexamination Certificate
active
07838382
ABSTRACT:
A method of manufacturing a semiconductor device includes forming a lower electrode on a semiconductor substrate, applying a photoresist on the lower electrode, forming an opening in the photoresist spaced from the periphery of the lower electrode, forming a high-dielectric constant film of a high-k material having a dielectric constant of 10 or more, performing liftoff so that the high-dielectric-constant film remains on the lower electrode, and forming an upper electrode on the high-dielectric-constant film remaining after the liftoff.
REFERENCES:
patent: 5319226 (1994-06-01), Sohn et al.
patent: 5638319 (1997-06-01), Onishi et al.
patent: 6436756 (2002-08-01), Nishimura et al.
patent: 6777776 (2004-08-01), Hieda
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2005/0218520 (2005-10-01), Kikuta et al.
patent: 11-145387 (1999-05-01), None
patent: 2004-152796 (2004-05-01), None
Fernandes Errol
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
Pham Thanh V
LandOfFree
Semiconductor device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4222158