Semiconductor device and method of manufacturing the...

Semiconductor device manufacturing: process – Making passive device – Planar capacitor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S381000, C438S396000

Reexamination Certificate

active

07838382

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a lower electrode on a semiconductor substrate, applying a photoresist on the lower electrode, forming an opening in the photoresist spaced from the periphery of the lower electrode, forming a high-dielectric constant film of a high-k material having a dielectric constant of 10 or more, performing liftoff so that the high-dielectric-constant film remains on the lower electrode, and forming an upper electrode on the high-dielectric-constant film remaining after the liftoff.

REFERENCES:
patent: 5319226 (1994-06-01), Sohn et al.
patent: 5638319 (1997-06-01), Onishi et al.
patent: 6436756 (2002-08-01), Nishimura et al.
patent: 6777776 (2004-08-01), Hieda
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2005/0218520 (2005-10-01), Kikuta et al.
patent: 11-145387 (1999-05-01), None
patent: 2004-152796 (2004-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4222158

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.